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The ability to control the charge and lattice degrees of freedom in nanoscale and low dimensional materials can often lead to new electronic and magnetic states and facilitate the rational design of novel functionalities for device applications. In this talk, I will discuss how we utilize the electric field effect and epitaxial strain to achieve such controls in two distinct classes of electronic systems, the two dimensional layered semiconductor MoS2, and the strongly correlated oxides (La,Sr)MnO3 and (Sm,Nd)NiO3.
In the first topic, I will describe our effort in achieving nonvolatile field effect modulation of MoS2 using a ferroelectric polymer as the top-gate, which can lead to programmable Schottky junction type devices when combined with the scanning probe approach. In the second topic, I’ll show how nanoscale periodic depth modulation can lead to a 50-fold enhancement of the magnetic anisotropy in ultrathin (La,Sr)MnO3, which has been attributed to a non-equilibrium strain distribution established due to the nanostructure engineering. I will also discuss the complex interplay among ferroelectric field effect, epitaxial strain, and interfacial charge transfer in determining the electronic properties of (Sm,Nd)NiO3 thin films. Our work highlights the rich opportunities in both fundamental studies and technological development of these hybrid and nanostructured material systems brought by nanoscale charge and lattice modulation. |
